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Product Description
The SGA-2263 is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high FT and excellent thermal perfomance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. Only 2 DC-blocking capacitors, a bias resistor and an optional RF choke are required for operation.
SGA-2263 SGA-2263Z
Pb
RoHS Compliant & Green Package
DC-5000 MHz, Cascadable SiGe HBT MMIC Amplifier
The matte tin finish on Sirenza's lead-free package utilizes a post annealing process to mitigate tin whisker formation and * Now available in Lead Free, RoHS Compliant, & Green Packaging is RoHS compliant per EU Directive 2002/95. This package is also manufactured with green molding compounds that * High Gain : 13.8 dB at 1950 MHz contain no antimony trioxide nor halogenated fire retardants.
Product Features
* Cascadable 50 Ohm
Gain & Return Loss vs. Freq. @TL=+25C 24 0
* Operates From Single Supply * Low Thermal Resistance Package
Return Loss (dB)
18 Gain (dB) GAIN 12 6 ORL 0 0 1 2 3 Frequency (GHz) 4 5 IRL
-10
Applications
* * * * PA Driver Amplifier Cellular, PCS, GSM, UMTS IF Amplifier Wireless Data, Satellite
-20 -30
-40
Symbol G
Parameter Small Signal Gain
Units dB
Frequency 850 MHz 1950 MHz 2400 MHz 850 MHz 1950 MHz 850 MHz 1950 MHz
Min. 13.2
Typ. 14.7 13.5 13.2 7.5 6.1 20.2 18.0 5000
Max. 16.2
P1dB OIP3
Output Pow er at 1dB Compression Output Third Order Intercept Point
dBm dBm MHz dB dB dB V mA C/W
Bandw idth Determined by Return Loss (>10dB)
IRL ORL NF VD ID RTH, j-l
Input Return Loss Output Return Loss Noise Figure Device Operating Voltage Device Operating Current Thermal Resistance (junction to lead)
VS = 5 V RBIAS = 140 Ohms
1950 MHz 1950 MHz 1950 MHz 1.9 17
17.6 25.3 3.5 2.2 20 255 2.5 23
Test Conditions:
ID = 20 mA Typ. TL = 25C
OIP3 Tone Spacing = 1 MHz, Pout per tone = -10 dBm ZS = ZL = 50 Ohms
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user's own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc.. All worldwide rights reserved.
303 Technology Court, Broomfield, CO 80021
Phone: (800) SMI-MMIC
1
http://www.sirenza.com
EDS-100626 Rev E
SGA-2263 DC-5000 MHz Cascadable MMIC Amplifier
Preliminary
Typical RF Performance at Key Operating Frequencies
Symbol Parameter Unit 100
Frequency Frequency (MHz) Frequency (MHz)(MHz) 500 850 1950
2400
3500
G OIP3 P1dB IRL ORL S12 NF
Small Signal Gain Output Third Order Intercept Point Output Power at 1dB Compression Input Return Loss Output Return Loss Reverse Isolation Noise Figure
VS = 5 V VS = 8 V RBIAS = 140 Ohms RBIAS = 39 Ohms
dB dBm dBm dB dB dB dB
= 20 mA Typ. IID = 80 mA Typ. D T = 25C TLL = 25C
14.9 20.4 7.6 21.3 24.1 17.8 21.5 23.0 18.5 3.3
14.7 20.2 7.5 19.6 27.8 18.7 3.2
13.5 18.0 6.1 17.6 25.3 19.1 3.5
13.2 16.9 5.4 17.2 23.4 19.2 4.0 15.0 26.7 19.2
Test Conditions:
OIP Tone Spacing = 1 MHz, Pout -10 dBm OIP33 Tone Spacing = 1 MHz, Pout per tone = 0 dBm ZS = Z = 50 Ohms ZS = ZLL= 50 Ohms
Absolute Maximum Ratings Noise Figure vs. Frequency
VD= 2.2 V, ID= 20 mA
5 Noise Figure (dB) 4 3 2 1
Parameter Max. Device Current (ID) Max. Device Voltage (VD) Max. RF Input Power Max. Junction Temp. (TJ)
Operating Temp. Range (TL)
Absolute Limit 40 mA 4V +18 dBm
+150C -40C to +85C +150C
Max. Storage Temp.
TL=+25C
0 0 0.5 1 1.5 2 Frequency (GHz) 2.5 3
Operation of this device beyond any one of these limits may cause permanent damage. For reliable continous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias conditions should also satisfy the following expression: IDVD < (TJ - TL) / RTH, j-l
OIP3 vs. Frequency
VD= 2.2 V, ID= 20 mA
30 25 OIP3 (dBm)
P1dB vs. Frequency
VD= 2.2 V, ID= 20 mA
10 8 P1dB (dBm)
TL=+25C
6 4 2 0
TL=+25C
20 15 10 0 0.5 1 1.5 2 Frequency (GHz) 2.5 3
0
0.5
1 1.5 2 Frequency (GHz)
2.5
3
303 Technology Court, Broomfield, CO 80021
Phone: (800) SMI-MMIC
2
http://www.sirenza.com
EDS-100626 Rev E
SGA-2263 DC-5000 MHz Cascadable MMIC Amplifier
Preliminary
Typical RF Performance Over Temperature (
Bias: VD= 2.2 V, ID= 20 mA (Typ.)
)
24 18 S21(dB) 12 6
|S | vs. Frequency
21
0 -10 S11(dB) -20 -30
|S | vs. Frequency
11
TL
0 0 1 2 3 Frequency (GHz) 4
+25C -40C +85C
TL
-40 5 0 1 2 3 Frequency (GHz) 4
+25C -40C +85C
5
-10 -15 S12(dB) -20 -25
|S | vs. Frequency
12
|S | vs. Frequency
0 -10 S22(dB) -20 -30
22
TL
-30 0 1 2 3 Frequency (GHz) 4
+25C -40C +85C
TL
-40
5
+25C -40C +85C
0
1
2 3 Frequency (GHz)
4
5
NOTE: Full S-parameter data available at www.sirenza.com
303 Technology Court, Broomfield, CO 80021
Phone: (800) SMI-MMIC
3
http://www.sirenza.com
EDS-100626 Rev E
SGA-2263 DC-5000 MHz Cascadable MMIC Amplifier
Preliminary
Basic Application Circuit
R BIAS Application Circuit Element Values
Frequency (Mhz) Reference Designator 500 850 1950 2400 3500
VS
1 uF
1000 pF
CD LC 1,2
CB CD LC
220 pF 100 pF 68 nH
100 pF 68 pF 33 nH
68 pF 22 pF 22 nH
56 pF 22 pF 18 nH
39 pF 15 pF 15 nH
RF in CB
3 SGA-2263 6 4,5 CB
RF out
Recommended Bias Resistor Values for ID=20mA RBIAS=( VS-VD ) / ID Supply Voltage(VS) RBIAS 5V 140 6V 200 8V 300 10 V 390
VS
RBIAS 1 uF 1000 pF
Note: RBIAS provides DC bias stability over temperature.
CD LC
A22
Mounting Instructions
1. Use a large ground pad area near device pins 1, 2,
CB
CB
4, and 5 with many plated through-holes as shown. 3. We recommend 1 or 2 ounce copper. Measurements for this data sheet were made on a 31 mil thick FR-4 board with 1 ounce copper on both sides.
Pin # 3
Function RF IN
Description RF input pin. This pin requires the use of an external DC blocking capacitor chosen for the frequency of operation. Connection to ground. Use via holes for best performance to reduce lead inductance as close to ground leads as possible.
Part Identification Marking
654
654
1, 2, 4, 5
GND
A22
123
A22Z
123
6
RF OUT/ RF output and bias pin. DC voltage is BIAS present on this pin, therefore a DC blocking capacitor is necessary for proper operation.
Caution: ESD sensitive
Appropriate precautions in handling, packaging and testing devices must be observed.
Part Number Ordering Information
Part Number
Reel Size
Devices/Reel
SGA-2263 SGA-2263Z
7" 7"
3000 3000
303 Technology Court, Broomfield, CO 80021
Phone: (800) SMI-MMIC
4
http://www.sirenza.com
EDS-100626 Rev E
SGA-2263 DC-5000 MHz Cascadable MMIC Amplifier
SOT-363 PCB Pad Preliminary Layout
Dimensions in inches [millimeters]
RF OUT RF IN
Notes: 1. Provide a large ground pad area under device pins 1, 2, 4, & 5 with many plated via holes as shown. 2. Dimensions given for 50 Ohm RF I/O lines are for 31 mil thick Getek. Scale accordingly for different board thicknesses and dielectric contants. 3. We recommend 1 or 2 ounce copper. Measurements for this data sheet were made on a 31 mil thick Getek with 1 ounce copper on both sides.
SOT-363 Nominal Package Dimensions
Dimensions in inches [millimeters] A link to the SOT-363 package outline drawing with full dimensions and tolerances may be found on the product web page at www.sirenza.com.
303 Technology Court, Broomfield, CO 80021
Phone: (800) SMI-MMIC
5
http://www.sirenza.com
EDS-100626 Rev E

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